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| IRFBC40 Data Sheet July 1999 File Number 2157.3 6.2A, 600V, 1.200 Ohm, N-Channel Power MOSFET This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as switching regulators, switching convertors, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These types can be operated directly from integrated circuits. Formerly developmental type TA17426. Features * 6.2A, 600V * rDS(ON) = 1.200 * Single Pulse Avalanche Energy Rated * Simple Drive Requirements * Ease of Paralleling * Related Literature - TB334, "Guidelines for Soldering Surface Mount Components to PC Boards" Symbol D Ordering Information PART NUMBER IRFBC40 PACKAGE TO-220AB BRAND IRFBC40 S G NOTE: When ordering, include the entire part number. Packaging JEDEC TO-220AB SOURCE DRAIN GATE DRAIN (FLANGE) 4-263 CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures. http://www.intersil.com or 407-727-9207 | Copyright (c) Intersil Corporation 1999 IRFBC40 Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified IRFBC40 600 600 6.2 3.9 25 20 125 1.0 570 -55 to 150 300 260 UNITS V V A A A V W W/oC mJ oC oC oC Drain to Source Breakdown Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VDS Drain to Gate Voltage (RGS = 20k) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDGR Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID TC = 100oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID Pulsed Drain Current (Note 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VGS Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .PD Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Single Pulse Avalanche Energy Rating (Note 2) (See Figures 15,16). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .EAS Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG Maximum Temperature for Soldering Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Tpkg CAUTION: Stresses above those listed in "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. NOTE: 1. TJ = 25oC to 125oC. Electrical Specifications PARAMETER TC = 25oC, Unless Otherwise Specified SYMBOL BVDSS VGS(TH) IDSS ID(ON) IGSS rDS(ON) gfs td(ON) tr td(OFF) tf Qg(TOT) Qgs Qgd CISS COSS CRSS LD Measured from the Drain Lead, 6mm (0.25in) from Package to Center of Die Measured from the Source Lead, 6mm (0.25in) from Header to Source Bonding Pad Modified MOSFET Symbol Showing the Internal Devices Inductances D LD G LS S TEST CONDITIONS VGS = 0V, ID = 250A, (Figure 11) VGS = VDS, ID = 250A VDS = Rated BVDSS, VGS = 0V VDS = 0.8 x Rated BVDSS, VGS = 0V, TJ = 125oC VDS > ID(ON) x rDS(ON)MAX, VGS = 10V VGS = 20V VGS = 10V, ID = 3.4A (Figures 9, 10) VDS 100V, IDS = 3.4A (Figure 13) VDD = 300V, ID 6.2A, RG = 9.1, VGS = 10V, RL = 47 Switching Speeds are Essentially ndependent of Operating Temperature MIN 600 2.0 6.2 4.7 - TYP 0.97 70 13 18 55 20 40 5.5 20 1300 160 45 4.5 MAX 4.0 25 250 100 1.2 20 27 83 30 60 - UNITS V V A A A nA S ns ns ns ns nC nC nC pF pF pF nH Drain to Source Breakdown Voltage Gate to Source Threshold Voltage Zero Gate Voltage Drain Current On-State Drain Current (Note 4) Gate to Source Leakage Drain to Source On Resistance (Note 2) Forward Transconductance (Note 4) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge (Gate to Source + Gate to Drain) Gate to Source Charge Gate to Drain "Miller" Charge Input Capacitance Output Capacitance Reverse Transfer Capacitance Internal Drain Inductance VGS = 10V, ID = 6.2A, VDS = 0.7 x Rated BVDSS (Figure 14) Gate Charge is Essentially Independent of Operating Temperature - VGS = 0V, VDS = 25V, f = 1.0MHz (Figure 12) - Internal Source Inductance LS - 7.5 - nH Thermal Resistance Junction to Case Thermal Resistance Junction to Ambient RJC RJA Typical Socket Mount - - 1.0 80 oC/W oC/W 4-264 IRFBC40 Source to Drain Diode Specifications PARAMETER Continuous Source to Drain Current Pulse Source to Drain Current (Note 3) SYMBOL ISD ISDM TEST CONDITIONS Modified MOSFET Symbol Showing the Integral Reverse P-N Junction Diode G D MIN - TYP - MAX 6.2 25 UNITS A A S Diode Source to Drain Voltage (Note 2) Reverse Recovery Time Reverse Recovery Charge NOTES: VSD trr QRR TJ = 25oC, ISD = 6.2A, VGS = 0V (Figure 8) TJ = 25oC, ISD = 6.2A, dISD/dt = 100A/s TJ = 25oC, ISD = 6.2A, dISD/dt = 100A/s 200 1.8 450 3.8 1.5 940 8.0 V ns C 2. Pulse test: pulse width 300s, duty cycle 2%. 3. Repetitive rating: pulse width limited by Max junction temperature. See Transient Thermal Impedance curve (Figure 3). 4. VDD = 50V, starting TJ = 25oC, L = 16mH, RG = 25, peak IAS = 6.8A Typical Performance Curves 1.2 POWER DISSIPATION MULTIPLIER 1.0 Unless Otherwise Specified 10 0.8 0.6 0.4 0.2 0 ID, DRAIN CURRENT (A) 0 50 100 150 8 6 4 2 0 25 50 75 100 125 150 TC, CASE TEMPERATURE (oC) TC , CASE TEMPERATURE (oC) FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE TEMPERATURE FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs CASE TEMPERATURE 1 ZJC, NORMALIZED TRANSIENT THERMAL IMPEDANCE (oC/W) 0.5 0.2 0.1 0.1 0.05 0.02 0.02 0.01 10-2 SINGLE PULSE PDM t1 t2 t2 NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZJC x RJC + TC 10-4 0.1 10-3 10-2 t1, RECTANGULAR PULSE DURATION (s) 1 10 10-3 10-5 FIGURE 3. NORMALIZED MAXIMUM TRANSIENT THERMAL IMPEDANCE 4-265 IRFBC40 Typical Performance Curves 102 Unless Otherwise Specified (Continued) 10 OPERATION IN THIS REGION IS LIMITED BY rDS(ON) ID, DRAIN CURRENT (A) 10s 8 VGS = 10V VGS = 6.0V 6 VGS = 5.5V PULSE DURATION = 80s DUTY CYCLE = 0.5% MAX VGS = 5.0V 4 ID, DRAIN CURRENT (A) 10 100s 1ms 1 10ms TC = 25oC TJ = MAX RATED SINGLE PULSE 2 VGS = 4.5V VGS = 4.0V DC 103 0 0 0.1 1 102 10 VDS, DRAIN TO SOURCE VOLTAGE (V) 60 120 180 240 VDS, DRAIN TO SOURCE VOLTAGE (V) 300 FIGURE 4. FORWARD BIAS SAFE OPERATING AREA FIGURE 5. OUTPUT CHARACTERISTICS 10 PULSE DURATION = 80s DUTY CYCLE = 0.5% MAX VGS =10V 10 VGS = 6.0V VGS = 5.5V PULSE DURATION = 80s DUTY CYCLE = 0.5% MAX VDS 100V ID, DRAIN CURRENT (A) 1 ID, DRAIN CURRENT (A) 8 6 VGS = 5.0V 4 TJ = 150oC 0.1 TJ = 25oC 2 VGS = 4.5V VGS = 4.0V 0 0 3 6 9 12 VDS, DRAIN TO SOURCE VOLTAGE (V) 15 10-2 0 2 4 6 8 VGS, GATE TO SOURCE VOLTAGE (V) 10 FIGURE 6. SATURATION CHARACTERISTICS FIGURE 7. TRANSFER CHARACTERISTICS 102 ISD, SOURCE TO DRAIN CURRENT (A) DRAIN TO SOURCE ON RESISTANCE PULSE DURATION = 80s DUTY CYCLE = 0.5% MAX 5 PULSE DURATION = 80s DUTY CYCLE = 0.5% MAX 4 10 TJ = 150oC TJ = 25oC 1 3 VGS = 10V 2 VGS = 20V 1 0.1 0 0 0.3 0.6 0.9 1.2 VSD, SOURCE TO DRAIN VOLTAGE (V) 1.5 0 6 12 18 ID, DRAIN CURRENT (A) 24 30 FIGURE 8. SOURCE TO DRAIN DIODE VOLTAGE FIGURE 9. DRAIN TO SOURCE ON RESISTANCE vs GATE VOLTAGE AND DRAIN CURRENT 4-266 IRFBC40 Typical Performance Curves 3.0 NORMALIZED DRAIN TO SOURCE ON RESISTANCE PULSE DURATION = 80s DUTY CYCLE = 0.5% MAX ID = 3.4A, VGS = 10V Unless Otherwise Specified (Continued) 1.25 NORMALIZED DRAIN TO SOURCE BREAKDOWN VOLTAGE ID = 250A 2.4 1.15 1.8 1.05 1.2 0.95 0.6 0.85 0 -60 -40 -20 0 20 40 60 80 100 120 140 160 0.75 -60 -40 -20 0 20 40 60 80 100 120 140 160 TJ, JUNCTION TEMPERATURE (oC) TJ, JUNCTION TEMPERATURE (oC) FIGURE 10. NORMALIZED DRAIN TO SOURCE ON RESISTANCE vs JUNCTION TEMPERATURE FIGURE 11. NORMALIZED DRAIN TO SOURCE BREAKDOWN VOLTAGE vs JUNCTION TEMPERATURE 3000 gfs, TRANSCONDUCTANCE (S) VGS = 0V, f = 1MHz CISS = CGS + CGD CRSS = CGD COSS CDS + CGD 10 2400 C, CAPACITANCE (pF) 8 PULSE DURATION = 80s DUTY CYCLE = 0.5% MAX VDS 100V TJ = 25oC 1800 CISS 6 TJ = 150oC 1200 COSS 600 CRSS 0 0 2 10 20 50 5 VDS, DRAIN TO SOURCE VOLTAGE (V) 102 4 2 0 0 2 4 6 ID, DRAIN CURRENT (A) 8 10 FIGURE 12. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE FIGURE 13. TRANSCONDUCTANCE vs DRAIN CURRENT 20 GATE TO SOURCE VOLTAGE (V) ID = 6.2A 16 VDS = 120V 12 VDS = 240V VDS = 360V 8 4 0 0 12 24 36 48 60 Qg, GATE CHARGE (nC) FIGURE 14. GATE TO SOURCE VOLTAGE vs GATE CHARGE 4-267 IRFBC40 Test Circuits and Waveforms VDS L tP VARY tP TO OBTAIN REQUIRED PEAK IAS VGS DUT tP 0V RG + BVDSS VDS VDD IAS VDD - IAS 0.01 0 tAV FIGURE 15. UNCLAMPED ENERGY TEST CIRCUIT FIGURE 16. UNCLAMPED ENERGY WAVEFORMS tON td(ON) tr RL VDS + tOFF td(OFF) tf 90% 90% RG DUT - VDD 0 10% 90% 10% VGS VGS 0 10% 50% PULSE WIDTH 50% FIGURE 17. SWITCHING TIME TEST CIRCUIT FIGURE 18. RESISTIVE SWITCHING WAVEFORMS CURRENT REGULATOR VDS (ISOLATED SUPPLY) VDD SAME TYPE AS DUT Qg(TOT) Qgd Qgs D VDS VGS 12V BATTERY 0.2F 50k 0.3F G DUT 0 IG(REF) 0 IG CURRENT SAMPLING RESISTOR S VDS ID CURRENT SAMPLING RESISTOR IG(REF) 0 FIGURE 19. GATE CHARGE TEST CIRCUIT FIGURE 20. GATE CHARGE WAVEFORMS 4-268 IRFBC40 All Intersil semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certification. Intersil semiconductor products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time without notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries. For information regarding Intersil Corporation and its products, see web site http://www.intersil.com Sales Office Headquarters NORTH AMERICA Intersil Corporation P. O. Box 883, Mail Stop 53-204 Melbourne, FL 32902 TEL: (407) 724-7000 FAX: (407) 724-7240 EUROPE Intersil SA Mercure Center 100, Rue de la Fusee 1130 Brussels, Belgium TEL: (32) 2.724.2111 FAX: (32) 2.724.22.05 ASIA Intersil (Taiwan) Ltd. 7F-6, No. 101 Fu Hsing North Road Taipei, Taiwan Republic of China TEL: (886) 2 2716 9310 FAX: (886) 2 2715 3029 4-269 |
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